View EMH2302_4311359.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Ordering number : EN8726
EMH2302
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
EMH2302
Features
*
General-Purpose Switching Device Applications
*
The EMH2302 incorporates a P-channel MOSFET that feature low ON-resistance and ultrahigh-speed switching, thereby enabling high-density mounting. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (900mm2!0.8mm) 1unit Mounted on a ceramic board (900mm2!0.8mm) Conditions P-channel --30 20 --2 --8 1.0 1.2 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-30V, VGS=0V VGS=16V, VDS=0V VDS=-10V, ID=--1mA VDS=-10V, ID=-1A ID=--1A, VGS=-10V ID=--0.5A, VGS=-4V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --30 --1 10 --1.2 1.3 2.2 115 215 285 65 52 8.4 15.5 29 25.5 150 310 --2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns
Marking : MB
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
92706PE MS IM TC-00000040 No.8726-1/4
EMH2302
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A VDS=--10V, VGS=-10V, ID=--2A IS=--2A, VGS=0V Ratings min typ 6.7 1.1 1.05 --0.85 --1.2 max Unit nC nC nC V
Package Dimensions
unit : mm (typ) 7045-002
Electrical Connection
8 0.2
7
6
5
0.2
0.125
8
5
1
0.5 2.0
0.2
4
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1
1 2 3 4
1.7
2.1
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : EMH8
Top view
Switching Time Test Circuit
VIN 0V --10V VIN ID= --1A RL=15 VDD= --15V
0.05
0.75
D
PW=10s D.C.1%
VOUT
G
EMH2302 P.G 50
S
No.8726-2/4
EMH2302
--2.0 --1.8 --1.6
ID -- VDS
--15.0V --1 0.0V
--6. -8.0V 0V --4 .0V
--3.0
ID -- VGS
VDS= --10V
--3.0V
--2.5
Drain Current, ID -- A
--1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 0 0
Drain Current, ID -- A
--2.0
--1.5
VGS= --2.5V
--1.0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0
Ta= 7
--0.5
5C --25 C 25C
--2.5 --3.0
--3.5
--4.0
Drain-to-Source Voltage, VDS -- V
450
IT11523 450
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT11524
RDS(on) -- Ta
Ta=25C
--1.0A
Static Drain-to-Source On-State Resistance, RDS(on) -- m
Static Drain-to-Source On-State Resistance, RDS(on) -- m
400 350 300
400 350 300 250 200 150 100 50 0 --60
ID= --0.5A
250 200 150 100 50 0 0 --2 --4 --6 --8 --10 --12 --14 --16
A --0.5 I D=
= --4 , VGS
V
1 , V S= -I D= --1.0A G
0V
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
7
yfs -- ID
IT11525 5
Ambient Temperature, Ta -- C
IT11526
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
5 3 2
VDS= --10V
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
1.0 7 5 3 2
7
C 5
--0.01 7 5 3 2
0.1 --0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
--0.001 --0.2
--0.4
Ta= 7
Ta
25
C
--0.6
--25 C
--0.8
5C
25C
C -25 =-
Source Current, IS -- A
--1.0
--1.2 IT11528
Drain Current, ID -- A
5 3
IT11527 1000
SW Time -- ID
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
2 100 7 5 3 2 10 7 5 3 2 1.0 --0.01
VDD= --15V VGS= --10V
7 5
Ciss, Coss, Crss -- pF
tf
3 2
Ciss
td(off)
td(on)
tr
100 7 5
Coss
Crss
3 2 2 3 5 7 --0.1 2 3 5 7 --1.0 0 --5 --10 --15 --20 --25 --30 IT11530
Drain Current, ID -- A
IT11529
Drain-to-Source Voltage, VDS -- V
No.8726-3/4
EMH2302
--10 --9
VGS -- Qg
VDS= --10V ID= --2A Drain Current, ID -- A
2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ASO
IDP= --8A
Gate-to-Source Voltage, VGS -- V
--8 --7 --6 --5 --4 --3 --2 --1 0 0 1 2 3 4 5 6 7 IT11531
ID= --2A
10
10s 10 0 1m s s
m
DC
10
s
op
0m
s
er
ati
Operation in this area is limited by RDS(on).
on
--0.01 --0.01 2 3
Ta=25C Single pulse Mounted on a ceramic board (900mm2!0.8mm) 1unit
5 7 --0.1 23 5 7 --1.0 23 5 7 --10 23 5
Total Gate Charge, Qg -- nC
1.2
PD -- Ta
M
Drain-to-Source Voltage, VDS -- V
IT11543
Allowable Power Dissipation, PD -- W
1.0
ou
nt
ed
0.8
on
ac
er
am
0.6
ic
bo
ar
d(
90
0.4
0m
m2 !
0.8
m
0.2
m
)1
un
it
160
0 0 20 40 60 80 100 120 140
Ambient Temperature, Ta -- C
IT11544
Note on usage : Since the EMH2302 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of September, 2006. Specifications and information herein are subject to change without notice.
PS No.8726-4/4

▲Up To Search▲

Price & Availability of EMH2302

	To Download EMH2302 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .